CEB6601 Overview
CEP6601/CEB6601 CEF6601 P-Channel Enhancement Mode Field Effect Transistor.
CEB6601 Key Features
- 60V, -19A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V
CEB6601 Datasheet Details
| Part number | CEB6601 |
|---|---|
| Datasheet | CEB6601-CET.pdf |
| File Size | 386.40 KB |
| Manufacturer | CET |
| Description | P-Channel MOSFET |
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