CEB6601
CEB6601 is P-Channel MOSFET manufactured by CET.
FEATURES
-60V, -19A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
D S CEF SERIES
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS -60
VGS ±20
ID -19 -16d
IDM -76 -64d
50 46 0.4 0.3
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units
V V A A W W/ C C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 3 3.3 62.5 62.5
Units C/W C/W
Details are subject to change without notice .
Rev .3 2011.May. http://.cet-mos.
CEP6601/CEB6601...
