CEB6601 Description
CEP6601/CEB6601 CEF6601 P-Channel Enhancement Mode Field Effect Transistor.
CEB6601 Key Features
- 60V, -19A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V
- Part: CEB6601
- Manufacturer: CET
- Size: 386.40 KB
Related CET Datasheets
| Part Number | Description |
|---|---|
| CEB6056 | N-Channel MOSFET |
| CEB6060N | N-Channel Enhancement Mode Field Effect Transistor |
| CEB6086 | N-Channel MOSFET |
| CEB6086L | N-Channel MOSFET |
| CEB60N06G | N-Channel MOSFET |