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CEH3688 - N-Channel MOSFET

Datasheet Summary

Features

  • 30V, 3.0A, RDS(ON) = 78mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. RDS(ON) = 155mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 D1 S1 D2 654 1 23 G1 S2 G2.

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Datasheet Details

Part number CEH3688
Manufacturer CET
File Size 118.41 KB
Description N-Channel MOSFET
Datasheet download datasheet CEH3688 Datasheet
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CEH3688 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 3.0A, RDS(ON) = 78mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. RDS(ON) = 155mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 D1 S1 D2 654 1 23 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 30 VGS ±12 ID 3 IDM 12 Maximum Power Dissipation PD 1.
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