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CEM26138 - Dual N-Channel MOSFET

Datasheet Summary

Features

  • 30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 33mΩ @VGS = 4.5V. 20V, 6A, RDS(ON) = 27mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. SO-8 1 D1 D1 D2 D2 876 5 123 4 S1 G1 S2 G2.

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Datasheet Details

Part number CEM26138
Manufacturer CET
File Size 571.08 KB
Description Dual N-Channel MOSFET
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CEM26138 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 33mΩ @VGS = 4.5V. 20V, 6A, RDS(ON) = 27mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. SO-8 1 D1 D1 D2 D2 876 5 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Channel 1 Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 7.6 IDM 30 Channel 2 20 ±12 6 24 Maximum Power Dissipation PD 2.
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