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CEP840A - N-Channel MOSFET

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Features

  • Type CEP840A CEB840A CEF840A VDSS 500V 500V 500V RDS(ON) 0.85Ω 0.85Ω 0.85Ω ID 8.5A 8.5A 8.5A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEP840A
Manufacturer CET
File Size 432.55 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP840A Datasheet
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CEP840A/CEB840A CEF840A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP840A CEB840A CEF840A VDSS 500V 500V 500V RDS(ON) 0.85Ω 0.85Ω 0.85Ω ID 8.5A 8.5A 8.5A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a VDS VGS ID IDM e 500 ±30 8.5 6 34 8.5 d 6d 34 d Maximum Power Dissipation @ TC = 25 C - Derate above 25 C 150 48 PD 1 0.
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