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CEP84A4/CEB84A4
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
40V, 90A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(ON) = 7.8mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 40
VGS ±20
Drain Current-Continuous@ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
ID IDM PD
90 62 360 71 0.
CEP84A4 Datasheet
