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CEP840B - N-Channel MOSFET

Datasheet Summary

Features

  • 440V, 9A,RDS(ON) = 0.76Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S.

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Datasheet preview – CEP840B

Datasheet Details

Part number CEP840B
Manufacturer CET
File Size 386.90 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP840B Datasheet
Additional preview pages of the CEP840B datasheet.

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Full PDF Text Transcription

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CEP840B/CEB840B N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 440V, 9A,RDS(ON) = 0.76Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 440 ±30 9 36 125 0.
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