Datasheet4U Logo Datasheet4U.com

CEP840L - N-Channel MOSFET

Key Features

  • Type CEP840L CEB840L VDSS 500V 500V CEF840L 500V RDS(ON) 0.8Ω 0.8Ω 0.8Ω ID @VGS 8A 10V 8A 10V 8A e 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

📥 Download Datasheet

Datasheet Details

Part number CEP840L
Manufacturer CET
File Size 375.87 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP840L Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CEP8030L N-Channel Logic Level Enhancement Mode Field Effect Transistor Chino-Excel Technology
CEP803AL N-Channel Logic Level Enhancement Mode Field Effect Transistor Chino-Excel Technology
CEP8060 N-Channel Logic Level Enhancement Mode Field Effect Transistor Chino-Excel Technology
CEP8060L N-Channel Logic Level Enhancement Mode Field Effect Transistor Chino-Excel Technology
CEP8060LR N-Channel Logic Level Enhancement Mode Field Effect Transistor Chino-Excel Technology

Other Datasheets by CET

Part Number Description
CEP840A N-Channel MOSFET
CEP840B N-Channel MOSFET
CEP840G N-Channel MOSFET
CEP840N N-Channel MOSFET
CEP84A4 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP840L CEB840L VDSS 500V 500V CEF840L 500V RDS(ON) 0.8Ω 0.8Ω 0.8Ω ID @VGS 8A 10V 8A 10V 8A e 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS 500 VGS ±20 ID 8 8 e IDM f 32 32 e 125 40 PD 1.0 0.