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Silicon P-Channel Power MOSFET CRTK080P03L2P
General Description：
CRTK080P03L2P, the silicon P-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is
VDSS ID（Silicon limited current） ID（Package limited current） PD RDS(ON)Typ
-30 -75 -35 59.5 5.9
V A A W mΩ
suitable for use as a load switch and PWM applications. The package
form is PDFN3.3x3.3, which accords with the RoHS standard.
Features：
Fast Switching Low ON Resistance(Rdson≤7.5mΩ)
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CRTK080P03L2P Datasheet
