CRTK700N10S-G Datasheet | CR Micro

Silicon N-Channel Power MOSFET CRTK700N10S-G General Description： CRTK700N10S-G the silicon N-channel Enhanced VDSS VDMOSFETs, is obtained by the high density Trench technology ID 13 which reduce the conduction loss, improve switching PD RDS(ON) 57 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is PDFN3.3- 3.3, which accords with the Halogen Free standard. Features ： - Fast Switching - Low ON Resistance (Rdson≤70mΩ) - Low Gate Charge - Low Reverse transfer capacitances - 100% Single Pulse avalanche energy Test - Halogen Free Applications：...