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Silicon N-Channel Power MOSFET
○R
CS13N90 AKR-G
General Description：
VDSS
900
CS13N90 AKR-G, the silicon N-channel Enhanced ID
13
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
227
which reduce the conduction loss, improve switching
RDS(ON)Typ
0.57
performance and enhance the avalanche energy. The transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-247,
which accords with the RoHS standard..
Features：
Fast Switching
Low ON Resistance(Rdson≤0.68Ω)
Low Gate Charge (Typical Data: 87nC)
Low Reverse transfer capacitances(Typical: 3.3pF) 100% Single Pulse avalanche energy Test
Halogen Free
Applications：
Power switch circuit of inverter and welding.
CS13N90AKR-G Datasheet
