CS13N90AKR-G Overview
： VDSS 900 CS13N90 AKR-G, the silicon N-channel Enhanced ID 13 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 227 which reduce the conduction loss, improve switching RDS(ON)Typ 0.57 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-247, which accords with the...
CS13N90AKR-G Key Features
- Fast Switching
- Low ON Resistance(Rdson≤0.68Ω)
- Low Gate Charge (Typical Data: 87nC)
- Low Reverse transfer capacitances(Typical: 3.3pF)
- 100% Single Pulse avalanche energy Test
- Halogen Free