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Silicon N-Channel Power MOSFET
○R
CS13N90 ANR
General Description：
VDSS
900
V
CS13N90 ANR, the silicon N-channel Enhanced
ID
13
A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃) RDS(ON)Typ
227 0.57
W Ω
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-3P（N）, which accords with the RoHS standard..
Features：
l Fast Switching l Low ON Resistance(Rdson≤0.68Ω) l Low Gate Charge (Typical Data: 87nC) l Low Reverse transfer capacitances(Typical: 3.3pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of inverter and welding.
CS13N90ANR Datasheet
