CS13N90ANR Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS13N90 ANR General Description： VDSS CS13N90 ANR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) RDS(ON)Typ 227 0.57 W Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P（N）, which accords with the RoHS standard.. Features ： l Fast Switching l Low ON Resistance(Rdson≤0.68Ω) l Low Gate Charge (Typical Data: 87nC) l Low Reverse transfer capacitances(Typical: 3.3pF) l 100% Single Pulse...