CT2N7002E-R3 Description
The CT2N7002E-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
CT2N7002E-R3 Key Features
- Drain-Source Breakdown Voltage VDSS 60 V
- Drain-Source On-Resistance
- Advanced high cell density Trench Technology
- RoHS pliance & Halogen Free
- ESD protection