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CT2N7002E-R3 - N-Channel MOSFET

Datasheet Summary

Description

The CT2N7002E-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • Drain-Source Breakdown Voltage VDSS 60 V.
  • Drain-Source On-Resistance RDS(ON) 4.15Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.7Ω, at VGS= 5.0V, IDS= 500mA ℃.
  • Continuous Drain Current at TA=25 ,ID = 500mA.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.
  • ESD protection.

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Datasheet preview – CT2N7002E-R3

Datasheet Details

Part number CT2N7002E-R3
Manufacturer CT Micro
File Size 2.04 MB
Description N-Channel MOSFET
Datasheet download datasheet CT2N7002E-R3 Datasheet
Additional preview pages of the CT2N7002E-R3 datasheet.

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Full PDF Text Transcription

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CT2N7002E-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 60 V • Drain-Source On-Resistance RDS(ON) 4.15Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.7Ω, at VGS= 5.0V, IDS= 500mA ℃• Continuous Drain Current at TA=25 ,ID = 500mA • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free • ESD protection Applications • Cellular phone • Notebook • Power management Description The CT2N7002E-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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