CTL0322PS-R3 Datasheet | CT Micro

CTL0322PS-R3 P-Channel Enhancement MOSFET Features - Drain-Source Breakdown Voltage VDSS -20 V - Drain-Source On-Resistance RDS(ON) 55mΩ, at VGS= -4.5V, ID= -3.2A RDS(ON) 70mΩ, at VGS= -2.5V, ID= -2.4A RDS(ON) 100mΩ, at VGS= -1.8V, ID= -1.7A ℃- Continuous Drain Current at TA=25 ID = -3.2A - Advanced high cell density Trench Technology - Ro HS pliance & Halogen Free Description The CTL0322PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Applications - Power Management - Lithium Ion Battery - High-Side Switching Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2015 CTL0322PS-R3 P-Channel Enhancement...