CTL0383NS-R3 Overview
The CTL0383NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where low in-line power...
CTL0383NS-R3 Key Features
- Drain-Source Breakdown Voltage VDSS 30 V
- Drain-Source On-Resistance
- Continuous Drain Current at TC=25℃ID = 3.8A
- Advanced high cell density Trench Technology
- RoHS pliance & Halogen Free