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CYStech Electronics Corp.
P-Channel Logic Level Enhancement Mode Power MOSFET
Spec. No. : C733J3 Issued Date : 2011.05.25 Revised Date : Page No. : 1/7
MTP1406J3
Features
• Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package
BVDSS ID RDSON(MAX)
-60V -10A 90.8mΩ
Equivalent Circuit
MTP1406J3
Outline
TO-252AB TO-252AA
G：Gate D：Drain S：Source
G D S
G
D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter Symbol Limits Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=-10A, RG=25Ω Repetitive Avalanche Energy @ L=0.
MTP1406J3 Datasheet
