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MTP1406L3 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple Drive Requirement.
  • Low On-resistance.
  • Fast switching Characteristic.
  • Pb-free lead plating package BVDSS ID RDSON@VGS=-10V, ID=-4A RDSON@VGS=-10V, ID=-1.5A RDSON@VGS=-4.5V, ID=-2A -60V -4.8A 75mΩ (typ. ) 74mΩ (typ. ) 99mΩ (typ. ) Symbol MTP1406L3 Outline SOT-223 D S G：Gate D：Drain S：Source D G Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain C.

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Datasheet Details

Part number MTP1406L3
Manufacturer CYStech Electronics
File Size 329.26 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTP1406L3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET Spec. No. : C733L3 Issued Date : 2012.02.14 Revised Date : 2012.03.09 Page No. : 1/8 MTP1406L3 Features • Simple Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating package BVDSS ID RDSON@VGS=-10V, ID=-4A RDSON@VGS=-10V, ID=-1.5A RDSON@VGS=-4.5V, ID=-2A -60V -4.8A 75mΩ (typ.) 74mΩ (typ.) 99mΩ (typ.) Symbol MTP1406L3 Outline SOT-223 D S G：Gate D：Drain S：Source D G Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Linear Derating Factor Operating Junction and Storage Temperature Note : *1.