CYStech Electronics MTP1406L3
P-Channel Enhancement Mode Power MOSFET
| Part No. | MTP1406L3 |
|---|---|
| Datasheet | MTP1406L3 Download |
| Manufacturer |  CYStech Electronics |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Simple Drive Requirement● Low On-resistance
● Fast switching Characteristic
● Pb-free lead plating package BVDSS ID RDSON@VGS=-10V, ID=-4A RDSON@VGS=-10V, ID=-1.5A RDSON@VGS=-4.5V, ID=-2A -60V -4.8A 75mΩ (typ.) 74mΩ (typ.) 99mΩ (typ.) Symbol MTP1406L3 Outline SOT-223 D S G：Gate D：Drain S：Source D G
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Linear Derating Factor Operating Junction and Storage Temperature Note : *1. Pulse width limited by maximum junction temperature VDS VGS ID ID IDM Pd Tj, Tstg -60 ±20 -4.8 *1 -3.8 *1 -20 *1 2.7 *2 0.02 -55~+150 V V A A A W W/°C °C *2. Surface mounted on 1 in² copper pad of FR-4 board; 120°C/W when mounted on minimum copper pad MTP1406L3 CYStek Product Specification CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Spec.
