Datasheet4U Logo Datasheet4U.com

MTP1406M3 - P-Channel Logic Level Enhancement Mode MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance, RDS(ON)=90.8mΩ@VGS=-10V, ID=-4A.
  • Ultra High Speed Switching.
  • Pb-free lead plated package BVDSS ID RDSON(MAX) -60V -4A 90.8mΩ Symbol MTP1406M3 Outline SOT-89 G：Gate S：Source D：Drain G D D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current.
  • 1 Total Power Dissi.

📥 Download Datasheet

Datasheet Details

Part number MTP1406M3
Manufacturer CYStech Electronics
File Size 278.20 KB
Description P-Channel Logic Level Enhancement Mode MOSFET
Datasheet download datasheet MTP1406M3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTP10-B7F55 Thermopile Sensor MemsFrontier
MTP10N05 (MTP10N05 / MTP10N06) N-Channel Power MOSFETs Motorola
MTP10N06 (MTP10N05 / MTP10N06) N-Channel Power MOSFETs Motorola
MTP10N08 (MTP10N08 / MTP10N10) N-Channel Power MOSFETs Fairchild Semiconductor
MTP10N08 (MTP10N08 / MTP10N10) Power Field Effect Transistor Motorola Semiconductor

Other Datasheets by CYStech Electronics

Part Number Description
MTP1406J3 P-Channel MOSFET
MTP1406L3 P-Channel Enhancement Mode Power MOSFET
MTP1013C3 -20V P-CHANNEL MOSFET
MTP2010J3 P-Channel Logic Level Enhancement Mode MOSFET
MTP2071M3 20V P-CHANNEL Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode MOSFET Spec. No. : C733M3 Issued Date : 2011.05.16 Revised Date : 2013.08.12 Page No. : 1/5 MTP1406M3 Features • Single Drive Requirement • Low On-resistance, RDS(ON)=90.8mΩ@VGS=-10V, ID=-4A • Ultra High Speed Switching • Pb-free lead plated package BVDSS ID RDSON(MAX) -60V -4A 90.8mΩ Symbol MTP1406M3 Outline SOT-89 G：Gate S：Source D：Drain G D D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Operating Junction and Storage Temperature Note : *1. Pulse width limited by maximum junction temperature *2.