CYStech Electronics MTP1406M3
P-Channel Logic Level Enhancement Mode MOSFET
FEATURES
● Single Drive Requirement● Low On-resistance, RDS(ON)=90.8mΩ@VGS=-10V, ID=-4A
● Ultra High Speed Switching
● Pb-free lead plated package BVDSS ID RDSON(MAX) -60V -4A 90.8mΩ Symbol MTP1406M3 Outline SOT-89 G:Gate S:Source D:Drain G D D S
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Operating Junction and Storage Temperature Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle≤1% VDS VGS ID ID IDM Pd Tj, Tstg -60 ±20 -4 -2.4 -16 1.67 0.83 -55~+175 V A W °C MTP1406M3 CYStek Product Specification CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-a Spec. No. : C733M3 Issued Date : 2011.05.16 Revised Date : 2013.08.12 Page No. : 2/5 Value 90* * Surface mounted on 1 in² copper pad of F...