Datasheet4U Logo Datasheet4U.com

MTP2071M3 - 20V P-CHANNEL Enhancement Mode MOSFET

Key Features

  • Single Drive Requirement.
  • Ultra High Speed Switching.
  • Pb-free package BVDSS ID RDSON@VGS=-4.5V, ID=-4.2A RDSON@VGS=-2.5V, ID=-2A RDSON@VGS=-1.8V, ID=-1A -20V -5A 52mΩ (typ. ) 66mΩ (typ. ) 80mΩ (typ. ) Symbol MTP2071M3 Outline SOT-89 G：Gate S：Source D：Drain G D D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total.

📥 Download Datasheet

Datasheet Details

Part number MTP2071M3
Manufacturer CYStech Electronics
File Size 332.58 KB
Description 20V P-CHANNEL Enhancement Mode MOSFET
Datasheet download datasheet MTP2071M3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTP20N06V TMOS POWER FET Motorola
MTP20N06V Power MOSFET ON Semiconductor
MTP20N08 N-Channel Power MOSFET Fairchild Semiconductor
MTP20N10 N-Channel Power MOSFET Fairchild Semiconductor
MTP20N15E N-Channel Power MOSFET ON Semiconductor

Other Datasheets by CYStech Electronics

Part Number Description
MTP2010J3 P-Channel Logic Level Enhancement Mode MOSFET
MTP2301N3 20V P-CHANNEL Enhancement Mode MOSFET
MTP2301V3 -20V P-CHANNEL Enhancement Mode MOSFET
MTP2311AV8 P-Channel Enhancement Mode MOSFET
MTP2311N3 -60V P-CHANNEL Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. 20V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C417M3 Issued Date : 2012.02.17 Revised Date : 2013.08.12 Page No. : 1/8 MTP2071M3 Features • Single Drive Requirement • Ultra High Speed Switching • Pb-free package BVDSS ID RDSON@VGS=-4.5V, ID=-4.2A RDSON@VGS=-2.5V, ID=-2A RDSON@VGS=-1.8V, ID=-1A -20V -5A 52mΩ (typ.) 66mΩ (typ.) 80mΩ (typ.) Symbol MTP2071M3 Outline SOT-89 G：Gate S：Source D：Drain G D D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=70℃) Operating Junction and Storage Temperature Note : *1.