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MTP2010J3 - P-Channel Logic Level Enhancement Mode MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating and halogen-free package BVDSS ID RDSON(MAX) -100V -20A 95mΩ @ VGS=-10V, ID=-10A 105mΩ@ VGS=-4.5V, ID=-10A Equivalent Circuit MTP2010J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G D S Ordering Information Device MTP2010J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS c.

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Datasheet Details

Part number MTP2010J3
Manufacturer CYStech Electronics
File Size 342.46 KB
Description P-Channel Logic Level Enhancement Mode MOSFET
Datasheet download datasheet MTP2010J3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode Power MOSFET Spec. No. : C732J3 Issued Date : 2011.11.10 Revised Date : 2013.12.26 Page No. : 1/9 MTP2010J3 Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package BVDSS ID RDSON(MAX) -100V -20A 95mΩ @ VGS=-10V, ID=-10A 105mΩ@ VGS=-4.