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MTB1K0A20KQ8 - Dual N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Dual N-ch MOSFET package.
  • ESD protected gate.
  • Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDSON@VGS=10V, ID=1A RDSON@VGS=4.5V, ID=1A 200V 0.9A 0.72A 755mΩ(typ) 785mΩ(typ) Equivalent Circuit MTB1K0A20KQ8 Outline SOP-8 D2 D2 D1 D1 G：Gate D：Drain S：Source G2 S2 G1 S1 Ordering Information Device MTB1KA20KQ8-0-T3-G MTB1KA20KQ8-.

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Datasheet Details

Part number MTB1K0A20KQ8
Manufacturer CYStech
File Size 737.55 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB1K0A20KQ8 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. Dual N-Channel Enhancement Mode Power MOSFET MTB1K0A20KQ8 Spec. No. : C043Q8 Issued Date : 2017.08.17 Revised Date : 2020.01.13 Page No. : 1/9 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • ESD protected gate • Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDSON@VGS=10V, ID=1A RDSON@VGS=4.5V, ID=1A 200V 0.9A 0.
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