Datasheet4U Logo Datasheet4U.com

MTB1K0A20KQ8 - Dual N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Dual N-ch MOSFET package.
  • ESD protected gate.
  • Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDSON@VGS=10V, ID=1A RDSON@VGS=4.5V, ID=1A 200V 0.9A 0.72A 755mΩ(typ) 785mΩ(typ) Equivalent Circuit MTB1K0A20KQ8 Outline SOP-8 D2 D2 D1 D1 G：Gate D：Drain S：Source G2 S2 G1 S1 Ordering Information Device MTB1KA20KQ8-0-T3-G MTB1KA20KQ8-.

📥 Download Datasheet

Datasheet Details

Part number MTB1K0A20KQ8
Manufacturer CYStech
File Size 737.55 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB1K0A20KQ8 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTB1K0P25J3 P-Channel Enhancement Mode MOSFET Cystech Electonics
MTB10000 LED Lamp Arrays Marktech Corporate
MTB10010U NPN microwave power transistor NXP
MTB10062 Bi-Color LED Lamp Array Marktech Corporate
MTB100A10KRH8 Dual N-Channel Enhancement Mode Power MOSFET Cystech Electonics

Other Datasheets by CYStech

Part Number Description
MTB1K0N20KL3 N-Channel Enhancement Mode Power MOSFET
MTB100A06KRH8 Dual N-Channel Enhancement Mode Power MOSFET
MTB180A06KH8 Dual N-Channel Enhancement Mode Power MOSFET
MTB1D7N03ATH8 N-Channel Enhancement Mode Power MOSFET
MTB1D7N03J3 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Dual N-Channel Enhancement Mode Power MOSFET MTB1K0A20KQ8 Spec. No. : C043Q8 Issued Date : 2017.08.17 Revised Date : 2020.01.13 Page No. : 1/9 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • ESD protected gate • Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDSON@VGS=10V, ID=1A RDSON@VGS=4.5V, ID=1A 200V 0.9A 0.