MTB1K0N20KL3 Datasheet PDF - CYStech N-Channel Enhancement Mode Power MOSFET Specs

MTB1K0N20KL3 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Features

Low Gate Charge.
Simple Drive Requirement.
ESD protected gate, HBM 6kV, typically.
Pb-free lead plating & Halogen-free package BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=2A RDSON@VGS=4.5V, ID=1A 200V 1A 830mΩ (typ. ) 777mΩ (typ. ) Equivalent Circuit MTB1K0N20KL3 Outline SOT-223 D G：Gate D：Drain S：Source S D G Ordering Information Device MTB1K0N20KL3-0-T3-G Package SOT-223 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Ree.

Datasheet Details

Part number	MTB1K0N20KL3
Manufacturer	CYStech
File Size	442.63 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB1K0N20KL3 Datasheet
Additional preview pages of the MTB1K0N20KL3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. N-Channel Enhancement Mode MOSFET MTB1K0N20KL3 Spec. No. : C043L3 Issued Date : 2017.07.03 Revised Date : 2018.02.09 Page No. : 1/9 Features • Low Gate Charge • Simple Drive Requirement • ESD protected gate, HBM 6kV, typically • Pb-free lead plating & Halogen-free package BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=2A RDSON@VGS=4.5V, ID=1A 200V 1A 830mΩ (typ.) 777mΩ (typ.

Published: Mar 14, 2020 |