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MTB1K0N20KL3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • ESD protected gate, HBM 6kV, typically.
  • Pb-free lead plating & Halogen-free package BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=2A RDSON@VGS=4.5V, ID=1A 200V 1A 830mΩ (typ. ) 777mΩ (typ. ) Equivalent Circuit MTB1K0N20KL3 Outline SOT-223 D G：Gate D：Drain S：Source S D G Ordering Information Device MTB1K0N20KL3-0-T3-G Package SOT-223 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Ree.

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Datasheet Details

Part number MTB1K0N20KL3
Manufacturer CYStech
File Size 442.63 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB1K0N20KL3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode MOSFET MTB1K0N20KL3 Spec. No. : C043L3 Issued Date : 2017.07.03 Revised Date : 2018.02.09 Page No. : 1/9 Features • Low Gate Charge • Simple Drive Requirement • ESD protected gate, HBM 6kV, typically • Pb-free lead plating & Halogen-free package BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=2A RDSON@VGS=4.5V, ID=1A 200V 1A 830mΩ (typ.) 777mΩ (typ.