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PROCESS
Small Signal MOSFET Transistor
N- Channel Enhancement-Mode Transistor Chip
CP324
PROCESS DETAILS Process Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 33,500 PRINCIPAL DEVICE TYPES 2N7002 EPITAXIAL PLANAR 21.65 x 21.65 MILS 9.0 MILS 5.5 x 5.5 MILS 5.9 x 13.8 MILS Al - 30,000Å Au - 12,000Å
BACKSIDE DRAIN
R3 (22-March 2010)
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PROCESS
CP324
Typical Electrical Characteristics
R3 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
www.DataSheet4U.
CP324 Datasheet
