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PROCESS
Small Signal Transistor
CP327V
NPN - Silicon Darlington Transistor Chip
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 33,085 PRINCIPAL DEVICE TYPES CMLT6427E CMST6427E EPITAXIAL PLANAR 23 x 23 MILS 7.1 MILS 4.7 x 4.7 MILS 4.7 x 4.7 MILS Al-Si - 30,000Å Au - 12,000Å
BACKSIDE COLLECTOR
R0
R1 (9-September 2010)
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PROCESS
CP327V
Typical Electrical Characteristics
R1 (9-September 2010)
w w w. c e n t r a l s e m i . c o m
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CP327V Datasheet
