CPD41 Datasheet | Central Semiconductor

PROCESS Switching Diode High Current Switching Diode Chip .. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 19.7 x 19.7 MILS 8.0 MILS 6.5 x 6.5 MILS Al - 30,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 30,394 PRINCIPAL DEVICE TYPES 1N3600 1N4150 CMPD4150 R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS Typical Electrical Characteristics R4 (22-March 2010) w w w. c e n t r a l s e m i . c o...