CPD48V Datasheet | Central Semiconductor

PROCESS Schottky Diode High Current Schottky Diode Chip .. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 13.8 x 13.8 MILS 7.1 MILS 9.0 x 9.0 MILS Al - 30,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 89,720 PRINCIPAL DEVICE TYPES CMPSH-3 Series CMSSH-3 Series CMXSH-3 CMKSH-3T BACKSIDE CATHODE R3 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS Typical Electrical Characteristics R3 (22-March 2010) w w w. c e n t r a l s e m i . c o...