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CEM8809 - N-Channel MOSFET

Download the CEM8809 datasheet PDF. This datasheet also covers the CEM8809-Chino variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 30V, 15.5A, RDS(ON) = 5.5mΩ(typ) @VGS = 10V. RDS(ON) = 7.5mΩ(typ) @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D 8 D 7 D 6 D 5.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEM8809-Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM8809
Manufacturer Chino-Excel Technology
File Size 84.10 KB
Description N-Channel MOSFET
Datasheet download datasheet CEM8809 Datasheet

Full PDF Text Transcription for CEM8809 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CEM8809. For precise diagrams, and layout, please refer to the original PDF.

CEM8809 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 15.5A, RDS(ON) = 5.5mΩ(typ) @VGS = 10V. RDS(ON) = 7.5mΩ(typ) @VGS = 4.5V. Super high dense cell d...

View more extracted text
@VGS = 10V. RDS(ON) = 7.5mΩ(typ) @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D 8 D 7 D 6 D 5 PRELIMINARY SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C ±16 15.5 50 2.5 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambie

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