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CEM8811 - N-Channel MOSFET

Download the CEM8811 datasheet PDF. This datasheet also covers the CEM8811-Chino variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 30V ,12.5A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D 8 D 7 D 6 D 5 SO-8 1 1 S 2 S 3 S 4 G.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEM8811-Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM8811
Manufacturer Chino-Excel Technology
File Size 85.38 KB
Description N-Channel MOSFET
Datasheet download datasheet CEM8811 Datasheet

Full PDF Text Transcription for CEM8811 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CEM8811. For precise diagrams, and layout, please refer to the original PDF.

CEM8811 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V ,12.5A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. Super high dense cell design for ...

View more extracted text
= 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D 8 D 7 D 6 D 5 SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C ±20 12.5 50 2.5 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit

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