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PE2209A - P-Channel Power MOSFET

General Description

excellent RDS(ON) and low gate charge.

wide variety of applications.

Key Features

  • VDS = -20V, ID = -1.2A RDS(ON) < 195mΩ @ VGS=-4.5V RDS(ON) < 350mΩ @ VGS=-2.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PE2209A
Manufacturer ChipSourceTek
File Size 674.95 KB
Description P-Channel Power MOSFET
Datasheet download datasheet PE2209A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE2209A P-Channel Enhancement Mode Power MOSFET Description The PE2209A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = -20V, ID = -1.2A RDS(ON) < 195mΩ @ VGS=-4.5V RDS(ON) < 350mΩ @ VGS=-2.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch k ● Power management Marking and pin assignment rceTe SOT-23 ou Absolute Maximum Ratings (TA=25℃ unless otherwise noted) S Parameter Drain-Source Voltage p Gate-Source Voltage i Drain Current-Continuous h Pulsed Drain Current (Note 1) CMaximum Power Dissipation Symbol VDS VGS ID IDM PD Rating -20 ±12 -1.2 -3.5 0.