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PE4407A - P-Channel Enhancement Mode Power MOSFET

General Description

The PE4407A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = -30V, ID = -12A RDS(ON) < 13mΩ @ VGS=-10V RDS(ON) < 19mΩ @ VGS=-4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet Details

Part number PE4407A
Manufacturer ChipSourceTek
File Size 1.22 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE4407A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Power MOSFET Description The PE4407A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE4407A General Features ● VDS = -30V, ID = -12A RDS(ON) < 13mΩ @ VGS=-10V RDS(ON) < 19mΩ @ VGS=-4.