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CAS100H12AM1 - 100A Silicon Carbide Half-Bridge Module

Key Features

  • Package VDS 1.2 kV RDS(on) (TJ = 25˚C) EOFF (TJ = 125˚C) 16 mΩ 1.8 mJ.
  • Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) AlSiC Baseplate, AMB Si3N4 Substrate System Benefits En.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CAS100H12AM1 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features Package VDS 1.2 kV RDS(on) (TJ = 25˚C) EOFF (TJ = 125˚C) 16 mΩ 1.