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CAS325M12HM2 - All-Silicon Carbide High-Performance Half-Bridge Module

Key Features

  • Ultra-Low Loss, Low (5 nH) Inductance.
  • Ultra-Fast Switching Operation.
  • Zero Reverse Recovery Current from Diode.
  • Zero Turn-Off Tail Current from MOSFET.
  • Normally-Off, Fail-Safe Device Operation.
  • AlSiC Baseplate and Si3N4 AMB Substrate Ease of Paralleling.
  • High-Temperature Packaging, TJ(max) = 175 °C AS9100 / ISO9001 Certified Manufacturing System Benefits.
  • Enables Compact and Lightwei.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CAS325M12HM2 1.2 kV, 3.7 mΩ All-Silicon Carbide High-Performance, Half-Bridge Module C2M MOSFET and Z-RecTM Diode VDS 1.2 kV Esw, Total @ 600 V, 300 A 9.3 mJ RDS(on) 3.