CGHV22200 Description
CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2 GHz LTE, 4G Tele and BWA amplifier applications. The transistor is input matched and supplied in a ceramic/ metal flange package. Measured in the...
CGHV22200 Key Features
- 2.2 GHz Operation
- 18 dB Gain
- 35 dBc ACLR at 50 W PAVE
- 31-35 % Efficiency at 50 W PAVE
- High Degree of DPD Correction Can be Applied
- May 2015