Datasheet Summary
200 W, 1800-2200 MHz, GaN HEMT for LTE
Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8
- 2.2 GHz LTE, 4G Tele and BWA amplifier applications. The transistor is input matched and supplied in a ceramic/ metal flange package.
PNPa: CckGaHgVe2T2y2p0e0: F44a0n1d6C2GaHndV2424200106P1
Typical Performance Over 1.8
- 2.2 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.8 GHz
2.0 GHz
2.2 GHz
Gain @ 47 dBm
ACLR @ 47 dBm
-37.4
-37.4
-35.6
Drain Efficiency @ 47...