Overview: CGHV22200
200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is input matched and supplied in a ceramic/ metal flange package. PNPa: CckGaHgVe2T2y2p0e0: F44a0n1d6C2GaHndV2424200106P1 Typical Performance Over 1.8 - 2.2 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.8 GHz 2.0 GHz 2.2 GHz Gain @ 47 dBm 16.6 19.2 18.1 ACLR @ 47 dBm -37.4 -37.4 -35.6 Drain Efficiency @ 47 dBm 31.5 31.9 34.8 Note: Measured in the CGHV22200-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. IDS = 1.
