Overview: CGHV27060MP
60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a broadband device with no internal input or output match which allows for the agility to apply to a wide range of frequencies from UHF thru 2.7GHz. The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF, L Band or low S Band (<2.7GHz). Additionally, the transistor is well suited for LTE micro basestation amplifiers in the power class of 10 to 15W average power in high efficiency topologies such as Class A/B, F or Doherty amplifiers. PN: CGHV27060MP Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.5 GHz 2.6 GHz 2.7 GHz Gain @ 41.5 dBm Avg POUT 18.4 18.2 17.6 ACLR @ 41.5 dBm Avg POUT -33.2 -34.5 -35.8 Drain Efficiency @ 41.5 dBm Avg POUT 33 33 32 Note: Measured in the CGHV27060MP-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V, IDS = 125 mA. Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.5 GHz 2.6 GHz 2.7 GHz Gain 16.7 16.4 16.2 Output Power 94 87 83 Drain Efficiency 69 69 64 Note: Measured in the CGHV27060MP-TB amplifier circuit, under pulse width 100 μs, 10% duty cycle, PIN = 33 dBm.
