Datasheet Summary
PRELIMINARY
200 W, 2500-2700 MHz, GaN HEMT for LTE
Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Package Type : 440162 an d 440161 PN: CGHV27 200F and C GHV27200P
Typical Performance Over 2.5
- 2.7 GHz
Parameter Gain @ 47 dBm ACLR @ 47 dBm Drain Efficiency @ 47 dBm 2.5 GHz 15.0 -36.5 29.0
(TC = 25˚C)
2.6 GHz 16.0 -37.5 28.5 of Demonstration Amplifier
2.7 GHz 16.0 -37.0 29.0 Units dB dBc %
Note:...