CGHV27200 Description
PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. Measured in the CGHV27200-TB amplifier...
CGHV27200 Key Features
- 2.7 GHz Operation
- 16 dB Gain
- 37 dBc ACLR at 50 W PAVE
- 29 % Efficiency at 50 W PAVE
- High Degree of DPD Correction Can be Applied