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CGHV27200 - GaN HEMT

Key Features

  • 2.5 - 2.7 GHz Operation.
  • 16 dB Gain.
  • -37 dBc ACLR at 50 W PAVE ober 2012 Rev 0.1.
  • Oct.
  • 29 % Efficiency at 50 W PAVE.
  • High Degree of DPD Correction Can be Applied Subject to change without notice. www. cree. com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Curr.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type : 440162 an d 440161 PN: CGHV27 200F and C GHV27200P Typical Performance Over 2.5 - 2.7 GHz Parameter Gain @ 47 dBm ACLR @ 47 dBm Drain Efficiency @ 47 dBm 2.5 GHz 15.0 -36.5 29.0 (TC = 25˚C) 2.6 GHz 16.0 -37.5 28.5 of Demonstration Amplifier 2.7 GHz 16.0 -37.0 29.