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CY62147VLL-70ZI - 4M (256K x 16) Static RAM

Description

of read and write modes.

The CY62147V is a high-performance CMOS static RAM organized as 256K words by 16 bits.

These devices feature advanced circuit design to provide ultra-low active current.

Features

  • Wide voltage range: 2.7V.
  • 3.6V Ultra-low active, standby power Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected CMOS for optimum speed/power Package available in a standard 44-pin TSOP Type II (forward pinout) package deselected (CE HIGH) or when CE is LOW and both BLE and BHE are HIGH. The input/output pins (I/O0 through I/O15) are placed in a high-imp.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62147V MoBL® 4M (256K x 16) Static RAM Features • • • • • • • Wide voltage range: 2.7V–3.6V Ultra-low active, standby power Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected CMOS for optimum speed/power Package available in a standard 44-pin TSOP Type II (forward pinout) package deselected (CE HIGH) or when CE is LOW and both BLE and BHE are HIGH. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW.
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