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CY7C1473BV33 - 72-Mbit (2 M x 36/4 M x 18) Flow-Through SRAM

Download the CY7C1473BV33 datasheet PDF. This datasheet also covers the CY7C1471BV33 variant, as both devices belong to the same 72-mbit (2 m x 36/4 m x 18) flow-through sram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • No bus latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles.
  • Supports up to 133 MHz bus operations with zero wait states.
  • Data is transferred on every clock.
  • Pin compatible and functionally equivalent to ZBT™ devices.
  • Internally self timed output buffer control to eliminate the need to use OE.
  • Registered inputs for flow through operation.
  • Byte write capability.
  • 3.3 V/2.5 V I/O supply (VDDQ).
  • Fast clock-to-output times.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C1471BV33-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY7C1471BV33 CY7C1473BV33 72-Mbit (2 M × 36/4 M × 18) Flow-Through SRAM with NoBL™ Architecture 72-Mbit (2 M × 36/4 M × 18) Flow-Through SRAM with NoBL™ Architecture Features ■ No bus latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles ■ Supports up to 133 MHz bus operations with zero wait states ■ Data is transferred on every clock ■ Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self timed output buffer control to eliminate the need to use OE ■ Registered inputs for flow through operation ■ Byte write capability ■ 3.3 V/2.5 V I/O supply (VDDQ) ■ Fast clock-to-output times ❐ 6.