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CY7C1473BV33 - 72-Mbit (2 M x 36/4 M x 18) Flow-Through SRAM

This page provides the datasheet information for the CY7C1473BV33, a member of the CY7C1471BV33 72-Mbit (2 M x 36/4 M x 18) Flow-Through SRAM family.

Datasheet Summary

Features

  • No bus latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles.
  • Supports up to 133 MHz bus operations with zero wait states.
  • Data is transferred on every clock.
  • Pin compatible and functionally equivalent to ZBT™ devices.
  • Internally self timed output buffer control to eliminate the need to use OE.
  • Registered inputs for flow through operation.
  • Byte write capability.
  • 3.3 V/2.5 V I/O supply (VDDQ).
  • Fast clock-to-output times.

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Datasheet preview – CY7C1473BV33

Datasheet Details

Part number CY7C1473BV33
Manufacturer Cypress Semiconductor
File Size 648.07 KB
Description 72-Mbit (2 M x 36/4 M x 18) Flow-Through SRAM
Datasheet download datasheet CY7C1473BV33 Datasheet
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CY7C1471BV33 CY7C1473BV33 72-Mbit (2 M × 36/4 M × 18) Flow-Through SRAM with NoBL™ Architecture 72-Mbit (2 M × 36/4 M × 18) Flow-Through SRAM with NoBL™ Architecture Features ■ No bus latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles ■ Supports up to 133 MHz bus operations with zero wait states ■ Data is transferred on every clock ■ Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self timed output buffer control to eliminate the need to use OE ■ Registered inputs for flow through operation ■ Byte write capability ■ 3.3 V/2.5 V I/O supply (VDDQ) ■ Fast clock-to-output times ❐ 6.
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