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CYRS1049DV33 Datasheet 4-mbit (512 K X 8) Static Ram

Manufacturer: Cypress (now Infineon)

Overview: CYRS1049DV33 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology Radiation Performance Radiation Data ❥ Total dose 300 Krad ❥ Soft error rate (both heavy ion and proton) Heavy ions  1 × 10-10 upsets/bit-day with single-error correction, double error detection error detection and correction (SEC-DED EDAC) ❥ Neutron = 2.0 × 1014 N/cm2 ❥ Dose rate > 2.0 × 109 (rad(Si)/s) ❥ Latch up immunity LET = 120 MeV.

General Description

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3 Selection Guide ................................................................

3 Pin Configuration .............................................................

Key Features

  • ❥ Temperature ranges ❥ Military/Space:.
  • 55 °C to 125 °C ❥ High speed ❥ tAA = 12 ns ❥ Low active power ❥ ICC = 95 mA at 12 ns (PMAX = 315 mW) ❥ Low CMOS standby power ❥ ISB2 = 15 mA ❥ 2.0 V data retention ❥ Automatic power-down when deselected ❥ Transistor-transistor logic (TTL) compatible inputs and outputs ❥ Easy memory expansion with CE and OE features ❥ Available in Pb-free 36-pin ceramic flat package Logic Block Diagram ROW.

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