CYRS1049DV33 Datasheet | Cypress

4-Mbit (512 K × 8) Static RAM with Rad Stop™ Technology 4-Mbit (512 K × 8) Static RAM with Rad Stop™ Technology Radiation Performance Radiation Data ❥ Total dose 300 Krad ❥ Soft error rate (both heavy ion and proton) Heavy ions  1 × 10-10 upsets/bit-day with single-error correction, double error detection error detection and correction (SEC-DED EDAC) ❥ Neutron = 2.0 × 1014 N/cm2 ❥ Dose rate > 2.0 × 109 (rad(Si)/s) ❥ Latch up immunity LET = 120 Me V.cm2/mg (125 C) Processing Flows ❥ V grade - Class V flow in pliance with MIL-PRF 38535 Prototyping Options ❥ Non qualified manufacturers list (QML) V grade CYPT1049DV33 devices with same functional and timing characteristics in a 36-pin ceramic flat package Features ❥ Temperature ranges ❥ Military/Space: - 55 °C to 125 °C ❥ High speed ❥ t AA = 12 ns ❥ Low active power ❥ ICC = 95 m A at 12 ns (PMAX = 315 m W) ❥ Low CMOS standby power ❥ ISB2 = 15 m A ❥ 2.0 V data retention ❥ Automatic power-down when deselected ❥ Transistor-transistor logic (TTL) patible inputs and outputs ❥ Easy memory expansion with CE and OE Features ❥ Available in Pb-free 36-pin ceramic flat package Logic Block Diagram ROW DECODER SENSE AMPS A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 CE WE INPUT BUFFER 512K x 8 ARRAY COLUMN DECODER POWER DOWN IIO/O00 IIO/O1 1 II/OO22 IIO/O3 3 IIO/O4 4 IIO/O5 5 IIO/O6 6 IIO/O7 7 A11 A12 A13 A14 A15 A16 A17...