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CYRS1049DV33 - 4-Mbit (512 K x 8) Static RAM

General Description

3 Selection Guide 3 Pin Configuration 3 Maximum Ratings 4 Operating Range 4 DC Electrical Characteristics 4 Capacitance 5 Thermal Resistance 5 AC Test Loads and Waveforms 5 AC Switching Characteristics 6 Data Retention Characteristics 7 Data Retention Waveform 7 Switching Waveforms 8 Tr

Key Features

  • ❥ Temperature ranges ❥ Military/Space:.
  • 55 °C to 125 °C ❥ High speed ❥ tAA = 12 ns ❥ Low active power ❥ ICC = 95 mA at 12 ns (PMAX = 315 mW) ❥ Low CMOS standby power ❥ ISB2 = 15 mA ❥ 2.0 V data retention ❥ Automatic power-down when deselected ❥ Transistor-transistor logic (TTL) compatible inputs and outputs ❥ Easy memory expansion with CE and OE features ❥ Available in Pb-free 36-pin ceramic flat package Logic Block Diagram ROW.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYRS1049DV33 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology Radiation Performance Radiation Data ❥ Total dose 300 Krad ❥ Soft error rate (both heavy ion and proton) Heavy ions  1 × 10-10 upsets/bit-day with single-error correction, double error detection error detection and correction (SEC-DED EDAC) ❥ Neutron = 2.0 × 1014 N/cm2 ❥ Dose rate > 2.0 × 109 (rad(Si)/s) ❥ Latch up immunity LET = 120 MeV.