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CYRS1543AV18 Datasheet 72-mbit Qdr Ii+ Sram Four-word Burst Architecture

Manufacturer: Cypress (now Infineon)

Overview: 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture with RadStop™ Technology Radiation Performance Radiation Data ■ Total Dose =300 Krad ■ Soft error rate (both Heavy Ion and proton) Heavy ions  1 × 10-10 upsets/bit-day with an external SECDED EDAC Controller ■ Neutrons = 2.0 × 1014 N/cm2 ■ Dose rate = 2.0 × 109 rad(Si)/sec ■ Dose rate survivability (rad(Si)/sec) = 1.5 × 10^11 (rad(Si)/sec ■ Latch up immunity = 120 MeV.cm2/mg (125 °C) Prototyping Options ■ Non-qualified CYPT1543AV18, and CYPT1545AV18 devices with same functional and timing characteristics in a 165-ball Ceramic Column Grid Array (CCGA) package and Land Grid Array (LGA) package without solder columns attached.

General Description

The CYRS1543AV18 and CYRS1545AV18 are synchronous pipelined SRAMs, equipped with 1.8 V QDR II+ arc

Key Features

  • Separate independent read and write data ports.
  • Supports concurrent transactions.
  • 250 MHz clock for high bandwidth.
  • Four-word burst for reducing address bus frequency.
  • Double data rate (DDR) interfaces on both read and write ports at 250 MHz (data transferred at 500 MHz).
  • Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.
  • Echo clocks (CQ and CQ) simplify data capture in high speed systems.
  • Single multiplexed address input.

CYRS1543AV18 Distributor