CYRS1545AV18 Datasheet | Cypress

72-Mbit QDR® II+ SRAM Four-Word Burst Architecture with Rad Stop™ Technology Radiation Performance Radiation Data - Total Dose =300 Krad - Soft error rate (both Heavy Ion and proton) Heavy ions  1 × 10-10 upsets/bit-day with an external SECDED EDAC Controller - Neutrons = 2.0 × 1014 N/cm2 - Dose rate = 2.0 × 109 rad(Si)/sec - Dose rate survivability (rad(Si)/sec) = 1.5 × 10^11 (rad(Si)/sec - Latch up immunity = 120 Me V.cm2/mg (125 °C) Prototyping Options - Non-qualified CYPT1543AV18, and CYPT1545AV18 devices with same functional and timing characteristics in a 165-ball Ceramic Column Grid Array (CCGA) package and Land Grid Array (LGA) package without solder columns attached. Features - Separate independent read and write data ports - Supports concurrent transactions - 250 MHz clock for high bandwidth - Four-word burst for reducing address bus frequency - Double data rate (DDR) interfaces on both read and write ports at 250 MHz (data transferred at 500 MHz) - Two input clocks (K and K) for precise DDR timing - SRAM uses rising edges only - Echo clocks (CQ and CQ) simplify data capture in high speed systems - Single multiplexed address input bus latches address inputs for read and write ports - Separate port selects for depth expansion - Synchronous internally self-timed writes - QDR® II+ operates with 2.0 cycle read latency when the delay lock loop (DLL) is enabled - Available in × 18, and × 36 configurations - Full data coherency, providing most current data - Core VDD = 1.8 (± 0.1 V); I/O VDDQ = 1.4 V to VDD - Available in 165-ball CCGA (21 × 25 × 2.83 mm) CYRS1543AV18...