CY62177EV18 Description
The CY62177EV18 is a high-performance CMOS static RAM organized as 2 M words by 16 bits and 4 M words by 8 bits.
CY62177EV18 Key Features
- Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM)
- Very high speed
- Wide voltage range
- 1.65 V to 2.25 V
- Ultra low standby power
- Typical standby current: 3 A
- Maximum standby current: 25 A
- Ultra low active power
- Typical active current: 4.5 mA at f = 1 MHz
- Easy memory expansion with CE1, CE2, and OE Features