CY9C6264 Description
The CY9C6264 is a high-performance CMOS nonvolatile RAM employing an advanced magnetic RAM (MRAM) process. An MRAM is nonvolatile memory that operates as a RAM. It provides data retention for more than 10 years while eliminating the reliability concerns, functional disadvantages and system design plexities of battery-backed SRAM, EEPROM, Flash and FeRAM.
CY9C6264 Key Features
- 100% form-, fit-, and function-patible with 8K × 8 micropower SRAM CY9C6264
- Fast Read and Write access: 70 ns
- Voltage range: 4.5V-5.5V operation
- Low active power: 495 mW (max.)
- Low standby power, CMOS: 825 µW (max.)