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BTA1640I3 - PNP Transistor

Key Features

  • BVCEO IC RCESAT -50V -7A 70mΩ.
  • Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.15A.
  • Excellent current gain linearity.
  • RoHS compliant package Symbol BTA1640I3 Outline TO-251 B：Base C：Collector E：Emitter B CE B C Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Th.

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Datasheet Details

Part number BTA1640I3
Manufacturer Cystech Electonics Corp
File Size 186.81 KB
Description PNP Transistor
Datasheet download datasheet BTA1640I3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. PNP Epitaxial Planar Power Transistor Spec. No. : C657I3 www.DataSheet4U.com Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 1/5 BTA1640I3 Features BVCEO IC RCESAT -50V -7A 70mΩ • Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.15A • Excellent current gain linearity • RoHS compliant package Symbol BTA1640I3 Outline TO-251 B：Base C：Collector E：Emitter B CE B C Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1.