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BTA1640J3 - PNP Transistor

Key Features

  • BVCEO IC RCESAT -50V -7A 70mΩ.
  • Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.15A.
  • Excellent current gain linearity.
  • RoHS compliant package Symbol BTA1640J3 Outline TO-252 B:Base C:Collector E:Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Therm.

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Datasheet Details

Part number BTA1640J3
Manufacturer Cystech Electonics Corp
File Size 265.38 KB
Description PNP Transistor
Datasheet download datasheet BTA1640J3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. PNP Epitaxial Planar Power Transistor Spec. No. : C657J3 www.DataSheet4U.com Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 1/6 BTA1640J3 Features BVCEO IC RCESAT -50V -7A 70mΩ • Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.15A • Excellent current gain linearity • RoHS compliant package Symbol BTA1640J3 Outline TO-252 B:Base C:Collector E:Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1.