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BTA1664M3 - PNP Transistor

Key Features

  • Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA.
  • Pb-free package Symbol BTA1664M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -40 -25 -5 -2 0.6 1.
  • 2 2.
  • 3 150 -55~+150 Unit V V V A W °C °C Note :.
  • 1.

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Datasheet Details

Part number BTA1664M3
Manufacturer Cystech Electonics Corp
File Size 205.31 KB
Description PNP Transistor
Datasheet download datasheet BTA1664M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C315M3 www.DataSheet4U.com Issued Date : 2005.01.25 Revised Date : 2007.12.20 Page No. : 1/6 BTA1664M3 Features • Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA • Pb-free package Symbol BTA1664M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -40 -25 -5 -2 0.