Datasheet4U Logo Datasheet4U.com

BTD9065D3 - NPN Planar Transistor

Key Features

  • Low VCE(sat), VCE(sat)=0.65 V (typical), at IC / IB = 4A / 0.1A.
  • Excellent current gain characteristics.
  • Pb-free lead plating package Symbol BTD9065D3 Outline TO-126ML B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation(TA=25℃) Power Dissipation(TC=25℃) Junction Temperature Storage T.

📥 Download Datasheet

Datasheet Details

Part number BTD9065D3
Manufacturer Cystech Electonics
File Size 188.02 KB
Description NPN Planar Transistor
Datasheet download datasheet BTD9065D3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BTD1304A3 NPN Epitaxial Planar Transistor CYStech
BTD1304N3 NPN Epitaxial Planar Transistor CYStech
BTD1383M3 NPN Transistor Cystech Electonics Corp
BTD142F3 NPN Epitaxial Planar Transistor CYStech
BTD1616AA3 General Purpose NPN Epitaxial Planar Transistor CYStech

Other Datasheets by Cystech Electonics

Part Number Description
BTD965A3 NPN Planar Transistor
BTD965LA3 NPN Planar Transistor
BTD965N3 NPN Planar Transistor
BTD1383L3 NPN Epitaxial Planar Transistor
BTD1758J3 NPN Epitaxial Planar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD9065D3 BVCEO IC RCESAT Spec. No. : C847D3 Issued Date : 2011.03.25 Revised Date : Page No. : 1/5 20V 5A 160mΩ(typ.) Features • Low VCE(sat), VCE(sat)=0.65 V (typical), at IC / IB = 4A / 0.1A • Excellent current gain characteristics • Pb-free lead plating package Symbol BTD9065D3 Outline TO-126ML B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation(TA=25℃) Power Dissipation(TC=25℃) Junction Temperature Storage Temperature Note : *1. Single Pulse , Pw≦380μs,Duty≦2%.