BTD965N3 Description
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD965N3 Spec. 2003.07.02 Revised Date :2015.02.12 Page No.
BTD965N3 Key Features
- Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A
- Excellent DC current gain characteristics
- plementary to BTB1386N3
- Pb-free lead plating and halogen-free package