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BTD965N3 - NPN Planar Transistor

Key Features

  • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A.
  • Excellent DC current gain characteristics.
  • Complementary to BTB1386N3.
  • Pb-free lead plating and halogen-free package Symbol BTD965N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Am.

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Datasheet Details

Part number BTD965N3
Manufacturer Cystech Electonics
File Size 327.25 KB
Description NPN Planar Transistor
Datasheet download datasheet BTD965N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD965N3 Spec. No. : C847N3 Issued Date : 2003.07.02 Revised Date :2015.02.12 Page No. : 1/6 Features • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386N3 • Pb-free lead plating and halogen-free package Symbol BTD965N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range Note : Single Pulse Pw≦350μs, Duty≦2%.