The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 1/4
BTD1383L3
Description
• The BTD1383L3 is a darlington amplifier transistor.
Symbol
BTD1383L3 B C
Outline
SOT-223
C
E
B：Base C：Collector E：Emitter
C
E
B
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25°C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCES VEBO IC ICP Pd RθJA Tj Tstg Limits 40 32 10 0.3 1.5 (Note 1) 1.5 (Note 2) 83.3 (Note 2) 150 -55~+150 Unit V V V A A W °C/W °C °C
Note : 1.Single pulse test, PW=10ms 2 .
BTD1383L3 Datasheet
