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BTD1766M3 - NPN Epitaxial Planar Transistor

Key Features

  • Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A.
  • Excellent current gain characteristics.
  • Complementary to BTB1188M3.
  • Pb-free lead plating and halogen-free package Symbol BTD1766M3 Outline SOT-89 B：Base C：Collector E：Emitter BC E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Power Dissipation PD Operating Ju.

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Datasheet Details

Part number BTD1766M3
Manufacturer Cystech Electonics
File Size 256.68 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD1766M3 Datasheet

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Full PDF Text Transcription (Reference)

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1766M3 BVCEO IC RCESAT(typ) Spec. No. : C858M3 Issued Date : 2011.12.20 Revised Date : 2013.08.12 Page No. : 1/8 32V 2A 150mΩ Features • Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB1188M3 • Pb-free lead plating and halogen-free package Symbol BTD1766M3 Outline SOT-89 B：Base C：Collector E：Emitter BC E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Power Dissipation PD Operating Junction and Storage Temperature Range Tj ; Tstg Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm 2.