BTD1760J3 Description
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1760J3 BVCEO IC Spec. 2003.04.18 Revised Date.
BTD1760J3 Key Features
- Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A
- Excellent current gain characteristics
- plementary to BTB1184J3
- Pb-free lead plating and halogen-free package