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BTD1760J3 - NPN Epitaxial Planar Transistor

Key Features

  • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A.
  • Excellent current gain characteristics.
  • Complementary to BTB1184J3.
  • Pb-free lead plating and halogen-free package Symbol BTD1760J3 Outline TO-252(DPAK) B:Base C:Collector E:Emitter B CE Ordering Information Device BTD1760J3-X-T3-G Package TO-252 (Pb-free lead plating package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant.

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Datasheet Details

Part number BTD1760J3
Manufacturer Cystech Electonics
File Size 299.64 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD1760J3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1760J3 BVCEO IC Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2017.11.10 Page No. : 1/7 50V 3A Features • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.