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BTD1768N3 - NPN Epitaxial Planar Transistor

General Description

The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose application.

Key Features

  • Low collector saturation voltage.
  • High breakdown voltage, VCEO=80V (min. ).
  • High collector current, IC(max)=1A (DC).
  • Pb-free lead plating and halogen-free package Symbol BTD1768N3 Outline SOT-23 B:Base C:Collector E:Emitter Ordering Information Device BTD1768N3-X-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green co.

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Datasheet Details

Part number BTD1768N3
Manufacturer Cystech Electonics
File Size 261.91 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD1768N3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1768N3 Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date :2014.07.01 Page No. : 1/7 Description The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features • Low collector saturation voltage • High breakdown voltage, VCEO=80V (min.